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application manual li-lon battery protector rn5vm1 c/d series no. ea-041-9803 electronic devices division
no tice 1. the products and the product specifications described in this application manual are subject to change or discontinuation of production without notice for reasons such as improvement. therefore, before deciding to use the products, please refer to ricoh sales representatives for the latest information thereon. 2. this application manual may not be copied or otherwise reproduced in whole or in part without prior written consent of ricoh. 3. please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. the technical information described in this application manual shows typical characteristics of and example application circuits for the products. the release of such information is not to be construed as a warranty of or a grant of license under ricoh's or any third party's intellectual property rights or any other rights. 5. the products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, computer equipment, measuring instruments, consumer electronic products, amusement equipment etc.). those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us. 6. we are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. in order prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire-containment feature and fail-safe feature. we do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. anti-radiation design is not implemented in the products described in this application manual. 8. please contact ricoh sales representatives should you have any questions or comments concerning the products or the technical information. june 1995
rn5vm1 c/d series applica tion manu al contents outline ...................................................................................................... 1 fea tures ................................................................................................... 1 applica tions ............................................................................................. 2 block dia grams ....................................................................................... 2 selection guide ....................................................................................... 2 pin configura tion ................................................................................... 3 pin description ........................................................................................ 3 absolute maximum ra tings ................................................................... 4 electrical chara cteristic .................................................................. 5 timing dia gram ......................................................................................... 9 opera tion ................................................................................................ 11 test circuit ............................................................................................ 13 typical chara cteristics ..................................................................... 15 1) ov er-charge threshold v det1 (v) ..................................................................... 15 2) ov er-discharge threshold v det2 (v) .................................................................. 15 3) excess current threshold v det3 (v) ................................................................... 15 4) shor t circuit protector threshold vshor t (v) ......................................................... 15 5) output dela y of ov er-charge t vdet1 (ms) ............................................................ 15 6) output dela y of ov er-discharge t vdet2 (ms) ........................................................ 15 7) output dela y of excess current t vdet3 (ms) ......................................................... 16 8) output dela y of shor t circuit protector tshor t ( s) .................................................. 16 9) ov er-charge threshold hysteresis v hys1 (mv) ..................................................... 16 10) supply current i dd ( a) ................................................................................ 16 11) standb y current istandb y ( a) ........................................................................ 16 12) c out nch dr iv er on v oltage v ol1 (v) ............................................................... 17 13) c out pch dr iv er on v oltage v oh1 (v) ............................................................... 17
14) d out nch dr iv er on v oltage v ol2 (v) ............................................................... 17 15) d out pch dr iv er on v oltage v oh2 (v) ............................................................... 17 16) output dela y of ov er-charge t vdet1 (ms) ............................................................ 18 17) output dela y of shor t protection tshor t ( s) ......................................................... 18 18) output dela y of excess current t vdet3 (ms) ........................................................ 18 19) excess current threshold v det3 (v) ................................................................. 18 20) ov er-charge threshold v det1 (v) ..................................................................... 18 typical applica tion .............................................................................. 19 applica tion hints ................................................................................... 19 p a cka ge dimension ................................................................................ 20 t aping specifica tion ............................................................................. 20
1 li-lon b a tter y pr o tect or rn5vm1 c/d series outline the rn5vm series are protection ics for over-charge/discharge of rechargeable one-cell lithium-ion (li+) batteries by cmos process. the rn5vm series can detect over-charge/discharge of li+ one-cell and excess load current, further include a short cir - cuit protector for preventing large external short circuit current. each of these ics is composed of three voltage detectors, a reference unit, a hysteresis circuit, and a short circuit protec - tor. when charging voltage crosses the detector threshold from a low value to a value higher than v det1 , the output of c out pin, the output of over-charge detector/vd1, switches to low level, ..charger? negative pin level. after detecting over- charge the vd1 can be reset and the output of c out pin becomes ??when the v dd voltage is coming down to a level low - er than ? det1 - v hys1 ? or when a charger is disconnected from the battery pack while the v dd level is in between ? det1 and ? det1 - v hys1 ?in the rn5vm1 c version. while in the rn5vm1 d version after detecting over-charge, any load current can not be drawn from the battery pack when the v dd voltage stays over ? det1 - v hys1 ? excepting that the vd1 can be reset and it allows to draw load current when the v dd voltage is coming down to a level lower than ? det1 - v hys1 ?because of a cell internal discharging. the output of d out pin, the output of over-discharge detector/vd2, switches to ??after internally fixed delay time passed, when discharging voltage crosses the detector threshold from a high value to a value lower than v det2 . an excess load cur - rent can be sensed and cut off after internally fixed delay time passed through the built in excess current detector, vd3, with d out being enabled to low level. once after detecting excess current, the vd3 is released and d out level switches to ??by detaching a battery pack from a load system. further, short circuit protector makes d out level to ??immediately with external short circuit current and removing external short circuit leads d out level to ?? after detecting over-discharge, supply current will be kept extremely ??by halting some internal circuits operation. the output delay of over-charge detectors can be set by connecting external capac - itors. output type of c out and d out are cmos. sot23-6 is available. fea tures ?low supply current ................................ supply current typ. 3.0 a standby current (after detecting over-discharge) typ. 0.3 a ?high withstand voltage .......................... absolute maximum ratings 28v (v dd ?-) ?high accuracy detector threshold ....... over-charge detector 50mv over-discharge detector 2.5% ?variety of detector threshold ................ over-charge detector threshold 4.0v to 4.4v/step of 0.01v over-discharge detector threshold 2.0v to 3.0v/step of 0.05v ?built-in protection circuit ....................... excess current trip/short circuit protector ?output delay of over-charge ................. time delay at c 3 = 0.01 f and v dd =4.3v 75ms for rn5vm111 ?ultra small package ............................... sot-23-6
rn5vm1 c/d 2 applica tions block dia gram ?over-charge/over-discharge protection for li+ one-cell pack ?high precision protectors for cell-phones and any other gadgets using on board li+ one-cell battery selection guide in the rn5vm1 series three of the input threshold for over-charge, over-discharge and excess current and taping type can be designating at the user? request by part number as follows: rn5vm1 ? part number - - - a b c v d d c t + v d 1 + + v d 2 v d 3 v s s d o u t c o u t v - 5 2 6 1 4 3 l e v e l s h i f t s h o r t c i r c u i t d e t e c t o r d e l a y } } code description a serial number for the rn5vm series designating input threshold for over-charge, over-discharge and excess current detectors as well as hysteresis range for over-charge detector. designation of version symbols b c : drawing load current is allowable after detecting over-charge. d : drawing load current is not allowable after detecting over-charge. c designation of taping type: tr (refer to taping specification)
3 rn5vm1 c/d pin configura tion 1 2 3 6 4 ( m a r k s i d e ) 5 ?ot-23-6 pin description pin no. symbol pin description 1 c out output of over-charge detection, cmos output 2 ct pin for external capacitor setting output delay of vd1 3 v ss ground 4 d out output of over-discharge detection, cmos output 5 v dd power supply 6 v- pin for charger negative input
rn5vm1 c/d 4 absolute maximum ra tings symbol item rating unit v dd supply voltage ?.3 to 12 v v- input voltage v- pin v dd ?8 to v dd +0.3 v vct ct pin vss?.3 to v dd +0.3 v v cout output voltage c out pin v dd ?8 to v dd +0.3 v v dout d out pin vss?.3 to v dd +0.3 v p d power dissipation 150 mw topt operating temperature range ?0 to +85 ?c tstg storage temperature range ?5 to +125 ?c absolute maximum ratings absolute maximum ratings are threshold limit values that must not be exceeded even for an instant under any conditions. moreover, such values for any two items must not be reached simultaneously. operation above these absolute maximum ratings may cause degradation or permanent damage to the device. these are stress ratings only and do not necessarily imply functional operation below these limits. vss=0v
5 rn5vm1 c/d electrical chara cteristic symbol item conditions min. typ. max. unit v dd1 operating input voltage voltage defined as v dd ? ss 1.5 10 v vst minimum operating voltage voltage defined as v dd ?-, 1.2 v for 0v charging v dd ?ss=0v v det1 over-charge threshold voltage detect rising edge of supply voltage 4.20 4.25 4.30 v v hys1 over-charge threshold hysteresis range 0.15 0.2 0.25 v t vdet1 output delay time of over-charge c 3 =0.01 f, v dd =3.6v ? 4.3v 50 75 100 ms v det2 over-discharge threshold voltage detect falling edge of supply voltage 2.437 2.50 2.563 v t vdet2 output delay time of over-discharge v dd =3.6v ? 2.4v 7 10 13 ms v det3 excess current threshold voltage detect rising edge of ?-?pin voltage 0.17 0.20 0.23 v t vdet3 output delay time of excess current v dd =3.0v 9 13 17 ms vshort short detection voltage v dd =3.0v v dd ?.1 v dd ?.8 v dd ?.5 v t short output delay time of short detection v dd =3.0v 5 50 s rshort reset resistance for v dd =3.6v, v-=1.0v 50 100 150 k excess current protection v ol1 nch on voltage of c out i ol =50 a, v dd =4.4v 0.2 0.5 v v oh1 pch on voltage of c out i oh =?0 a, v dd =3.9v 3.4 3.8 v v ol2 nch on voltage of d out i ol =50 a, v dd =2.4v 0.2 0.5 v v oh2 pch on voltage of d out i oh =?0 a, v dd =3.9v 3.4 3.7 v i dd supply current v dd =3.9v, v-=0v 3.0 6.0 a istandby standby current v dd =2.0v 0.3 0.6 a topt=25?c * ) please refer to test circuit unless otherwise specified. ?rn5vm111c
rn5vm1 c/d 6 symbol item conditions min. typ. max. unit v dd1 operating input voltage voltage defined as v dd ? ss 1.5 10 v vst minimum operating voltage voltage defined as v dd ?-, 1.2 v for 0v charging v dd ?ss=0v v det1 over-charge threshold voltage detect rising edge of supply voltage 4.30 4.35 4.40 v v hys1 over-charge threshold hysteresis range 0.15 0.20 0.25 v t vdet1 output delay time of over-charge c 3 =0.01 f, v dd =3.6v ? 4.4v 55 80 105 ms v det2 over-discharge threshold voltage detect falling edge of supply voltage 2.437 2.500 2.563 v t vdet2 output delay time of over-discharge v dd =3.6v ? 2.4v 7 10 13 ms v det3 excess current threshold voltage detect rising edge of ?-?pin voltage 0.17 0.20 0.23 v t vdet3 output delay time of excess current v dd =3.0v 9 13 17 ms vshort short detection voltage v dd =3.0v v dd ?.1 v dd ?.8 v dd ?.5 v t short output delay time of short detection v dd =3.0v 5 50 s rshort reset resistance for v dd =3.6v, v-=1.0v 50 100 150 k excess current protection v ol1 nch on voltage of c out i ol =50 a, v dd =4.4v 0.2 0.5 v v oh1 pch on voltage of c out i oh =?0 a, v dd =3.9v 3.4 3.8 v v ol2 nch on voltage of d out i ol =50 a, v dd =2.4v 0.2 0.5 v v oh2 pch on voltage of d out i oh =?0 a, v dd =3.9v 3.4 3.7 v i dd supply current v dd =3.9v, v-=0v 3.0 6.0 a istandby standby current v dd =2.0v 0.3 0.6 a topt=25?c * ) please refer to test circuit unless otherwise specified. ?rn5vm112c
7 rn5vm1 c/d symbol item conditions min. typ. max. unit v dd1 operating input voltage voltage defined as v dd ? ss 1.5 10 v vst minimum operating voltage voltage defined as v dd ?-, 1.2 v for 0v charging v dd ?ss=0v v det1 over-charge threshold voltage detect rising edge of supply voltage 4.20 4.25 4.30 v v hys1 over-charge threshold hysteresis range 0.15 0.20 0.25 v t vdet1 output delay time of over-charge c 3 =0.01 f, v dd =3.6v ? 4.3v 50 75 100 ms v det2 over-discharge threshold voltage detect falling edge of supply voltage 2.437 2.500 2.563 v t vdet2 output delay time of over-discharge v dd =3.6v ? 2.4v 7 10 13 ms v det3 excess current threshold voltage detect rising edge of ?-?pin voltage 0.17 0.20 0.23 v t vdet3 output delay time of excess current v dd =3.0v 9 13 17 ms vshort short detection voltage v dd =3.0v v dd ?.1 v dd ?.8 v dd ?.5 v t short output delay time of short detection v dd =3.0v 5 50 s rshort reset resistance for v dd =3.6v, v-=1.0v 50 100 150 k excess current protection v ol1 nch on voltage of c out i ol =50 a, v dd =4.4v 0.2 0.5 v v oh1 pch on voltage of c out i oh =?0 a, v dd =3.9v 3.4 3.8 v v ol2 nch on voltage of d out i ol =50 a, v dd =2.4v 0.2 0.5 v v oh2 pch on voltage of d out i oh =?0 a, v dd =3.9v 3.4 3.7 v i dd supply current v dd =3.9v, v-=0v 3.0 6.0 a istandby standby current v dd =2.0v 0.3 0.6 a topt=25?c * ) please refer to test circuit unless otherwise specified. ?rn5vm111d
rn5vm1 c/d 8 symbol item conditions min. typ. max. unit v dd1 operating input voltage voltage defined as v dd ? ss 1.5 10 v vst minimum operating voltage voltage defined as v dd ?-, 1.2 v for 0v charging v dd ?ss=0v v det1 over-charge threshold voltage detect rising edge of supply voltage 4.30 4.35 4.40 v v hys1 over-charge threshold hysteresis range 0.15 0.20 0.25 v t vdet1 output delay time of over-charge c 3 =0.01 f, v dd =3.6v ? 4.4v 55 80 105 ms v det2 over-discharge threshold voltage detect falling edge of supply voltage 2.437 2.500 2.563 v t vdet2 output delay time of over-discharge v dd =3.6v ? 2.4v 7 10 13 ms v det3 excess current threshold voltage detect rising edge of ?-?pin voltage 0.17 0.20 0.23 v t vdet3 output delay time of excess current v dd =3.0v 9 13 17 ms vshort short detection voltage v dd =3.0v v dd ?.1 v dd ?.8 v dd ?.5 v t short output delay time of short detection v dd =3.0v 5 50 s rshort reset resistance for v dd =3.6v, v-=1.0v 50 100 150 k excess current protection v ol1 nch on voltage of c out i ol =50 a, v dd =4.4v 0.2 0.5 v v oh1 pch on voltage of c out i oh =?0 a, v dd =3.9v 3.4 3.8 v v ol2 nch on voltage of d out i ol =50 a, v dd =2.4v 0.2 0.5 v v oh2 pch on voltage of d out i oh =?0 a, v dd =3.9v 3.4 3.7 v i dd supply current v dd =3.9v, v-=0v 3.0 6.0 a istandby standby current v dd =2.0v 0.3 0.6 a topt=25?c * ) please refer to test circuit unless otherwise specified. ?rn5vm112d
9 rn5vm1 c/d timing dia gram ?rn5vm1 c c h a r g i n g c h a r g i n g c h a r g i n g c h a r g i n g d i s c h a r g i n g d i s c h a r g i n g d i s c h a r g i n g e x c e s s c u r r e n t s h o r t c i r c u i t o p e n o p e n c h a r g i n g c u r r e n t d i s c h a r g i n g c u r r e n t 0 d o u t c o u t v d d v - t t t t t v s s v s s v d d v d d v d d v d e t 2 v d e t 1 v d e t 3 v d e t 1 v h y s 1 v s h o r t v - t v d e t 1 t v d e t 1 t v d e t 2 t v d e t 2 t v d e t 3 t s h o r t c h a r g i n g / d i s c h a r g i n g c u r r e n t
rn5vm1 c/d 10 ?rn5vm1 d c h a r g i n g c h a r g i n g c h a r g i n g d i s c h a r g i n g d i s c h a r g i n g d i s c h a r g i n g o p e n o p e n o p e n 0 d o u t c o u t v d d v - t t t t t v s s v s s v d d v d d v d d v d e t 2 v d e t 1 v d e t 3 v d e t 1 v h y s 1 v s h o r t v - s e l f d i s c h a r g i n g t v d e t 1 t v d e t 3 t v d e t 2 t v d e t 2 t v d e t 3 t s h o r t c h a r g i n g c u r r e n t d i s c h a r g i n g c u r r e n t e x c e s s c u r r e n t s h o r t c i r c u i t c h a r g i n g / d i s c h a r g i n g c u r r e n t
11 rn5vm1 c/d opera tion ? the vd1 monitors v dd pin voltage. when the v dd voltage crosses over-charge detector threshold v det1 from a low val - ue to a value higher than the v det1 , the vd1 can sense over-charging and an external charge control nch-mos-fet turns to ?ff?with c out pin being at ?? ? an output delay time for over-charge detection can be set by an external capacitor c 3 connecting the vss pin and ct pin. the external capacitor can make a delay time from a moment detecting over-charge to a time output a signal which enables charge control nch-mos-fet for turning to ?ff? though the v dd voltage would be going up to a higher lev - el than v det1 if it is within a time period of the output delay time, vd1 would not output a signal for turning ?ff?of charg control nch-mos-fet. the output delay time can be calculated as below: t vdet1 = c 3 ( v dd ?0.7 ) 0.48 10 ? ? a level shifter incorporated in a buffer driver for the c out pin makes the ??of c out pin to the v- pin voltage and the ? of c out pin is set to v dd voltage with cmos buffer. ?vd1/over-charge detector ? after detecting over-charge, the vd1 would not be released and c out level would not switch to ??again with the excep - tion that a cell voltage reaches to a lower value than ? det1 ? hys1 ?by self discharge of cell or else. after detecting over- charge, when the v dd level stays at a value higher than ? det1 ? hys1 ? to connect battery pack to a system load makes battery pack being disabled at for charging or discharging because of excess current detector operated being d out ?? reset conditions from overcharging of rn5vm 1 c ? there can be two cases to reset the vd1 making the c out pin level to ??again after detecting over-charge. resetting the vd1 makes the charging system ready for resumption of charging process. the first case is in such condition that a time when the v dd voltage is coming down to a level lower than ? det1 ? hys1 ? while in the second case, disconnecting a charger from the battery pack can make the vd1 resetting when the v dd lev - el is within hysteresis width (v det1 ? hys1 v dd < v det1 ) ? after detecting over-charge with the v dd voltage of higher than v det1 , connecting system load to the battery pack makes load current allowable through parasitic diode of external charge control nch-mos-fet. the c out level would be ? when the v dd level is coming down to a level below the v det1 by continuous drawing of load current. reset conditions from overcharging of rn5vm 1 d
rn5vm1 c/d 12 ? the vd2 monitors a v dd pin voltage. when the v dd voltage crosses the over-discharge detector threshold v det2 from a high value to a value lower than the v det2 , the vd2 can sense an over-discharging and the external discharge control nch-mos-fet turns to ?ff?with the d out pin being at ?? ? resetting the vd2 with the d out pin level being ??again after detecting over-discharge is only possible by connecting a charger to the battery pack. when the v dd voltage stays under over-discharge detector threshold v det2 charge current can flow through parasitic diode of external discharge control nch-mos-fet, then after the v dd voltage comes up to a value larger than v det2 discharging process would be advanced through ?n?state discharge control nch-mos-fet. connecting a charger to the battery pack makes the d out level being ??instantaneously when the v dd voltage is high - er than v det2 . ? when a cell voltage equals to zero, connecting charger to the battery pack makes the system allowable for charge with higher charge voltage than vst, 1.2v max. ? an output delay time for the over-discharge detection is fixed internally. though the v dd voltage would be going down to a lower level than v det2 if it is within a time period of the output delay time, vd2 would not output a signal for turning ?ff?of discharge control nch-mos-fet. ? after detection of an over-discharge by vd2, supply current would be reduced to 0.3 a typ. at v dd =2.0v and into stand - by, only the charger detector is operating. ? the output type of d out pin is cmos having ??level of v dd and ??level of vss. ?vd2/over-discharge detector ? both of the excess current detector and short circuit protector can work when both control nch-mos-fets are in ?n state. when the v- pin voltage is going up to a value between the short protection voltage vshort and excess current threshold v det3 , the excess current detector operates and further soaring of v- pin voltage higher than vshort makes the short cir - cuit protector enabled. as a result the external discharge control nch-mos-fet turns to ?ff?with the d out pin being at ?? ? an output delay time for the excess current detector is internally fixed, 13ms typ. at v dd =3.0v. a quick recovery of v- pin level from a value between vshort and v det3 within the delay time keeps the discharge control fet staying ?n?tate. when the short circuit protector is enabled, the d out would be ??and its delay time would be 5 s typ. ? the v- pin has a built-in pull down resistor, typ.100k , connected to the vss pin. after an excess current or short circuit protection is detected, removing a cause of excess current or external short cir - cuit makes an external discharge control nch-mos-fet to an ?n?state automatically with the v- pin level being down to the vss level through the built-in pull down resistor. ? when v dd voltage is higher than v det2 at a time when the excess current is detected the 5vm does not enter a standby mode, while v dd voltage is lower than v det2 the 5vm enters a standby mode. after detecting short circuit the 5vm will not enter a standby mode. ?vd3/excess current detector, short circuit protector
13 rn5vm1 c/d test circuit v d d v s s v - c o u t c t v 0 . 0 1 f 1 3 5 6 2 test circuit 1 v d d v s s v - d o u t v 4 3 5 6 test circuit 2 d o u t v d d v s s v - 1 5 v 3 6 5 0 a test circuit 5 d o u t v d d v s s v - 4 5 v 3 6 5 0 a test circuit 6 d o u t v d d v s s v - 3 5 6 v a 4 test circuit 3 c o u t v d d v s s v - 5 v 3 6 5 0 a 1 test circuit 4
rn5vm1 c/d 14 d o u t v d d v s s v - 5 v 3 6 5 0 a 4 test circuit 7 v d d v s s v - 3 5 6 a test circuit 8 c o u t c 3 c 1 r 1 c t v d d v s s v - v 3 6 5 2 1 test circuit 9 d o u t v d d v s s v - r 2 c 2 3 4 5 6 v test circuit 10 the typical characteristics were obtained by use of these test circuits test circuit 1 : typical characteristics 1) 5) 9) 16) test circuit 2 : typical characteristics 2) 6) test circuit 3 : typical characteristics 3) 4) 7) 8) 18) test circuit 4 : typical characteristics 12) test circuit 5 : typical characteristics 13) test circuit 6 : typical characteristics 14) test circuit 7 : typical characteristics 15) test circuit 8 : typical characteristics 10) 11) test circuit 9 : typical characteristics 20) test circuit 10 : typical characteristics 17) 19)
15 rn5vm1 c/d typical chara cteristics 1) over-charge threshold vs. temperature o v e r - c h a r g e t h r e s h o l d v d e t 1 ( v ) t e m p e r a t u r e t o p t ( ? c ) 4 . 2 0 4 . 2 1 4 . 2 2 4 . 2 3 4 . 2 4 4 . 2 5 4 . 2 6 4 . 2 7 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 1 1 3) excess current threshold vs. temperature t e m p e r a t u r e t o p t ( ? c ) e x c e s s c u r r e n t t h r e s h o l d v d e t 3 ( v ) 0 . 1 9 0 0 . 1 9 5 0 . 2 0 0 0 . 2 0 5 0 . 2 1 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 1 1 / 1 1 2 5) output delay of over-charge vs. temperature 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 o u t p u t d e l a y o f o v e r - c h a r g e t v d e t 1 ( m s ) r n 5 v m 1 1 1 t e m p e r a t u r e t o p t ( ? c ) c 3 = 0 . 0 1 f , v d d = 3 . 6 v ? 4 . 3 v 2) over-discharge vs. temperature t e m p e r a t u r e t o p t ( ? c ) o v e r - d i s c h a r g e t h r e s h o l d v d e t 2 ( v ) 2 . 4 7 2 . 4 8 2 . 4 9 2 . 5 0 2 . 5 1 2 . 5 2 2 . 5 3 2 . 5 4 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 1 1 / 1 1 2 4) short circuit protector threshold vs. temperature 2 . 1 0 2 . 1 5 2 . 2 0 2 . 2 5 2 . 3 0 2 . 3 5 2 . 4 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 t e m p e r a t u r e t o p t ( ? c ) v d d = 3 . 0 v s h o r t c i r c u i t p r o t e c t o r t h r e s h o l d v s h o r t ( v ) 6) output delay of over-discharge vs. temperature 2 4 6 8 1 0 1 2 1 4 1 6 1 8 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 t e m p e r a t u r e t o p t ( ? c ) o u t p u t d e l a y o f o v e r - d i s c h a r g e t v d e t 2 ( m s ) r n 5 v m 1 1 1 / 1 1 2 v d d = 3 . 6 v ? 2 . 4 v
rn5vm1 c/d 16 7) output delay of excess current vs. temperature t e m p e r a t u r e t o p t ( ? c ) 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 o u t p u t d e l a y o f e x c e s s c u r r e n t t v d e t 3 ( m s ) v d d = 3 . 0 v 9) over-charge threshold hysteresis vs.temperature o v e r - c h a r g e t r e s h o l d h y s t e r e s i s v h y s 1 ( m v ) t e m p e r a t u r e t o p t ( ? c ) 0 . 1 9 0 0 . 1 9 5 0 . 2 0 0 0 . 2 0 5 0 . 2 1 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 1 1 / 1 1 2 11) standby current vs. temperature s t a n d b y c u r r e n t i s t a n d b y ( a ) t e m p e r a t u r e t o p t ( ? c ) 0 . 0 0 0 . 0 5 0 . 1 0 0 . 1 5 0 . 2 0 0 . 2 5 0 . 3 0 0 . 3 5 0 . 4 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 v d d = 2 . 0 v 8) output delay of short circuit protector vs. temperature o u t p u t d e l a y o f s h o r t c i r c u i t p r o t e c t o r t s h o r t ( s ) t e m p e r a t u r e t o p t ( ? c ) 0 2 4 6 8 1 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 v d d = 3 . 0 v 10) supply current vs. temperature s u p p l y c u r r e n t i d d ( a ) t e m p e r a t u r e t o p t ( ? c ) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 v d d = 3 . 9 v , v - = 0 v
17 rn5vm1 c/d 12) cout nch driver on voltage vs. temperature c o u t n c h d r i v e r o n v o l t a g e v o l 1 ( v ) i o l = 5 0 a , v d d = 4 . 4 v t e m p e r a t u r e t o p t ( ? c ) 0 . 0 0 0 . 0 5 0 . 1 0 0 . 1 5 0 . 2 0 0 . 2 5 0 . 3 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 14) d out nch driver on voltage vs. temperature d o u t n c h d r i v e r o n v o l t a g e v o l 2 ( v ) i o l = 5 0 a , v d d = 2 . 4 v t e m p e r a t u r e t o p t ( ? c ) 0 . 0 0 0 . 0 5 0 . 1 0 0 . 1 5 0 . 2 0 0 . 2 5 0 . 3 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 13) c out pch driver on voltage vs. temperature c o u t p c h d r i v e r o n v o l t a g e v o h 1 ( v ) i o h = 5 0 a , v d d = 3 . 9 v t e m p e r a t u r e t o p t ( ? c ) 3 . 6 0 3 . 6 5 3 . 7 0 3 . 7 5 3 . 8 0 3 . 8 5 3 . 9 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1 15) d out pch driver on voltage vs. temperature d o u t p c h d r i v e r o n v o l t a g e v o h 2 ( v ) i o h = 5 0 a , v d d = 3 . 9 v t e m p e r a t u r e t o p t ( ? c ) 3 . 6 0 3 . 6 5 3 . 7 0 3 . 7 5 3 . 8 0 3 . 8 5 3 . 9 0 6 0 4 0 2 0 0 2 0 4 0 6 0 8 0 1 0 0 r n 5 v m 1
rn5vm1 c/d 18 16) output delay of over-charge vs. capacitance c 3 e x t e r n a l c a p a c i t a n c e c 3 ( f ) o u t p u t d e l a y o f o v e r - c h a r g e t v d e t 1 ( m s ) 2 0 0 1 0 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 0 . 0 5 0 . 1 r n 5 v m 1 1 1 v d d = 3 . 6 v ? 4 . 3 v 18) output delay of excess current vs. v dd o u t p u t d e l a y o f e x c e s s c u r r e n t t v d e t 3 ( m s ) s u p p l y v o l t a g e v d d ( v ) 0 . 0 0 5 . 0 0 1 0 . 0 0 1 5 . 0 0 2 0 . 0 0 2 5 . 0 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 r n 5 v m 1 20) over-charge threshold vs. external resistance r 1 o v e r - c h a r g e t h r e s h o l d v d e t 1 ( v ) e x t e r n a l r e s i s t a n c e r 1 ( w ) c 1 = 0 t o 0 . 6 8 f 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 r n 5 v m 1 1 1 4 . 2 5 0 4 . 2 4 6 4 . 2 5 2 4 . 2 5 4 4 . 2 5 6 4 . 2 5 8 c 3 = 0 . 2 2 f 4 . 2 4 8 c 3 = 0 . 1 f c 3 = 0 . 0 1 f 17) output delay of short protection vs. capacitance c 2 e x t e r n a l c a p a c i t a n c e c 2 ( f ) o u t p u t d e l a y o f s h o r t p r o t e c t i o n t s h o r t ( s ) 1 1 0 1 0 0 1 0 0 0 1 0 0 0 0 0 . 0 0 1 0 . 0 1 0 . 1 1 r n 5 v m 1 r 2 = 1 k w , v d d = 3 . 0 v 19) excess current threshold vs. external resistance r 2 e x c e s s c u r r e n t t h r e s h o l d t d e t 3 ( m s ) v d d = 3 . 0 v 0 . 2 0 2 0 . 2 0 3 0 . 2 0 4 0 . 2 0 5 0 . 2 0 6 0 . 2 0 7 0 . 2 0 8 0 . 2 0 9 0 . 2 1 0 0 0 . 5 1 1 . 5 2 2 . 5 3 r n 5 v m 1 1 1 / 1 1 2 e x t e r n a l r e s i s t a n c e r 2 ( k w )
19 rn5vm1 c/d typical applica tion 3 4 1 2 5 6 + r n 5 v m 1 1 k w r 2 c 2 1 0 0 w r 1 0 . 1 f v d d v - d o u t c o u t v s s c t c 1 c 3 0 . 1 f 0 . 0 1 f note on external components ? 1 and c 1 will stabilize a supply voltage to the rn5vm. a recommended r 1 value is less than 1k . a larger value of r 1 leads higher detection voltage, makes some errors, because of shoot through current flowed in the rn5vm. ? 2 and c 2 will stabilize a v- pin voltage. the resetting from over-discharge with connecting charger possibly be disabled by larger value of r 2 . recommended value is less than 1k . after an over-charge detection, a system may not draw load current when a battery pack is connected to it in the c version with r2 and c2 time constants at relatively larger settings. recommended c 2 value is less than 1 f. ? 1 and r 2 can operate as a current limiter against setting cell reverse direction or for applying excess charging voltage to the 5vm. while smaller r 1 and r 2 may cause an over power dissipation rating of the rn5vm and a total of ? 1 +r 2 ?should be more than 1k . ?he time constants r 1 c 1 or r 2 c 2 must have a relations as below: r 1 c 1 r 2 c 2 because in case that r 1 c 1 , time constant for v dd pin, would be larger than r 2 c 2 , time constant for v- pin, then the rn5vm might be into a standby mode after detecting excess current or short circuit current.
rn5vm1 c/d 20 p a cka ge dimension (unit : mm) ?sot-23-6 t aping specifica tion (unit : mm) ?sot-23-6 2 . 9 0 . 2 0 . 8 0 . 1 + 0 . 1 0 . 2 0 . 4 1 . 9 0 . 2 ( 0 . 9 5 ) ( 0 . 9 5 ) 6 5 4 1 2 3 + 0 . 2 0 . 1 1 . 6 + 0 . 2 0 . 1 1 . 1 + 0 . 1 0 . 0 5 0 . 1 5 2 . 8 0 . 3 0 t o 0 . 1 0 . 2 m i n . u s e r d i r e c t i o n o f f e e d t r 2 . 0 m a x . 0 . 3 0 . 1 4 . 0 0 . 1 2 . 0 0 . 0 5 4 . 0 0 . 1 3 . 3 3 . 2 8 . 0 0 . 3 1 . 7 5 0 . 1 3 . 5 0 . 0 5 1 . 5 + 0 . 1 0
ricoh company, ltd. electronic devices division headquarters 13-1, himemuro-cho, ikeda city, osaka 563-8501, japan phone 81-727-53-1111 fax 81-727-53-6011 yokohama office (international sales) 3-2-3, shin-yokohama, kohoku-ku, yokohama city, kanagawa 222-8530, japan phone 81-45-477-1697 fax 81-45-477-1694 ?1695 http://www.ricoh.co.jp/lsi/english/ ricoh corporation electronic devices division san jose office 3001 orchard parkway, san jose, ca 95134-2088, u.s.a. phone 1-408-432-8800 fax 1-408-432-8375

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